Specification	BD679AS

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	TO-126-3
Vce Saturation (Max) @ Ib, Ic [Max]	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

BD679A Series

Medium Power NPN Darlington Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
ON Semiconductor BD679AS	80 V	40 W	150 °C	4 A	Through Hole	2.8 V	500 çA	TO-126-3 TO-225AA	750	TO-126-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications.