IXFA5N100P
ActiveDISCMOSFETN-CH HIPERFET-POLAR TO-263D2/ TUBE
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IXFA5N100P
ActiveDISCMOSFETN-CH HIPERFET-POLAR TO-263D2/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFA5N100P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1830 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 2.8 Ohm |
| Supplier Device Package | TO-263AA (IXFA) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXFA5N100P Series
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings
Documents
Technical documentation and resources