
Discrete Semiconductor Products
RJH1BF6RDPQ-80#T2
ActiveRenesas Electronics Corporation
IGBT 1100V 55A TO247
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DocumentsRJH1BF6RDPQ-80 Datasheet

Discrete Semiconductor Products
RJH1BF6RDPQ-80#T2
ActiveRenesas Electronics Corporation
IGBT 1100V 55A TO247
Deep-Dive with AI
DocumentsRJH1BF6RDPQ-80 Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RJH1BF6RDPQ-80#T2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 55 A |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 227.2 W |
| Supplier Device Package | TO-247 |
| Vce(on) (Max) @ Vge, Ic | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 37 | $ 8.32 | |
Description
General part information
RJH1BF6RDPQ-80 Series
IGBT devices for induction heating (IH) (soft switching), recommended for 10 to 100 kHz frequencies, and not guaranteed against short circuit.
Documents
Technical documentation and resources