Discrete Semiconductor Products

MCG40N03-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCG40N03-TP

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	722 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	20.8 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max) [Max]
Micro Commercial Components MCG40N10Y-TP	N-Channel	40 A	100 V	2.5 V	1051 pF	20 V	DFN3333	18.5 mOhm	16 nC	8-VDFN Exposed Pad	Surface Mount	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	43 W
Micro Commercial Components MCG40N03-TP	N-Channel	40 A	30 V	2 V	722 pF	20 V	DFN3333	7 mOhm	13 nC	8-VDFN Exposed Pad	Surface Mount	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20.8 W
Micro Commercial Components MCG40N10Y-TP	N-Channel	40 A	100 V	2.5 V	1051 pF	20 V	DFN3333	18.5 mOhm	16 nC	8-VDFN Exposed Pad	Surface Mount	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	43 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 0.21

General part information

N-Channel 30 V 40A 20.8W Surface Mount DFN3333

Technical documentation and resources