Discrete Semiconductor Products

CPH6153-P-TL-E

Obsolete

PNP SINGLE BIPOLAR GP BJT TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNP SINGLE BIPOLAR GP BJT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	CPH6153-P-TL-E

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	500 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max	1.3 W
Supplier Device Package	6-CPH
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	195 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max	Frequency - Transition	Mounting Type
ON Semiconductor CPH6153-P-TL-E	195 mV	200	PNP	20 V	3 A	150 °C	6-CPH	100 nA	SOT-23-6 Thin TSOT-23-6	1.3 W	500 MHz	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 20 V 3 A 500MHz 1.3 W Surface Mount 6-CPH

Technical documentation and resources

No documents available