Discrete Semiconductor Products

MCB120N08Y-TP

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N-CHANNEL MOSFET,D2-PAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB120N08Y-TP

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	5666 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCB120N08Y-TP	5666 pF	120 A	4.5 mOhm	73 nC	80 V	20 V	N-Channel	Surface Mount	-55 °C	150 °C	D2PAK	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	208 W	MOSFET (Metal Oxide)	10 V

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General part information

N-Channel 80 V 120A (Tc) 208W Surface Mount D2PAK

Technical documentation and resources