Specification	NTMFS2D3N04XMT1G

Current - Continuous Drain (Id) @ 25°C	111 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1421 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	53 W
Rds On (Max) @ Id, Vgs	2.35 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NTMFS2D3N04XM Series

Power MOSFET, Single N-Channel, SO8FL 40V, 2.35mΩ, 111A

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
ON Semiconductor NTMFS2D3N04XMT1G	111 A	1421 pF	2.35 mOhm	3.5 V	20 V	5-DFN (5x6)	8-SOFL	10 V	Surface Mount	-55 °C	175 ░C	53 W	40 V	N-Channel	8-PowerTDFN 5 Leads	22.1 nC	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.30
		10	$ 0.82
		100	$ 0.54
		500	$ 0.42
	Digi-Reel®	1	$ 1.30
		10	$ 0.82
		100	$ 0.54
		500	$ 0.42
	Tape & Reel (TR)	1500	$ 0.37
		3000	$ 0.34
		4500	$ 0.32
		7500	$ 0.30
		10500	$ 0.30
Newark	Each (Supplied on Cut Tape)	1	$ 1.98
ON Semiconductor	N/A	1	$ 0.36

Description

General part information

NTMFS2D3N04XM Series

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.