Specification	FDP8441

Current - Continuous Drain (Id) @ 25°C	80 A, 23 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP8441 Series

N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDP8441	10 V	4 V	23 A 80 A	N-Channel	20 V	TO-220-3	2.7 mOhm	-55 °C	175 ░C	15000 pF	MOSFET (Metal Oxide)	TO-220-3	Through Hole	40 V	300 W	280 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	187	$ 1.61

General part information

N-Channel PowerTrench®MOSFET 40 V, 80 A, 2.7 mΩ

Technical documentation and resources