Discrete Semiconductor Products

BAW62,133

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DIODE GEN PURP 75V 250MA ALF2

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Discrete Semiconductor Products

Active

DIODE GEN PURP 75V 250MA ALF2

Technical Specifications

Parameters and characteristics for this part

Specification	BAW62,133

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction	200 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	ALF2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Supplier Device Package	Technology	Mounting Type	Package / Case	Operating Temperature - Junction	Speed	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
Freescale Semiconductor - NXP BAW62,133	ALF2	Standard	Through Hole	Axial DO-204AH DO-35	200 °C	200 mA 500 ns	250 mA	4 ns	5 µA	75 V	2 pF	1 V
Freescale Semiconductor - NXP BAW62,113	ALF2	Standard	Through Hole	Axial DO-204AH DO-35	200 °C	200 mA 500 ns	250 mA	4 ns	5 µA	75 V	2 pF	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 75 V 250mA Through Hole ALF2

Technical documentation and resources