Discrete Semiconductor Products

BAW62,133

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DIODE GEN PURP 75V 250MA ALF2

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Discrete Semiconductor Products

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DIODE GEN PURP 75V 250MA ALF2

Technical Specifications

Parameters and characteristics for this part

Specification	BAW62,133

Capacitance	2 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	200 °C
Package / Case	Axial, DO-35, DO-204AH
Package Name	ALF2
Reverse Recovery Time (trr)	4 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	75 V
Voltage - Forward (Vf) (Max)	1 V

High Conductance Fast Diode

Part	Technology	Capacitance	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Package Name	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Package / Case	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)
NXP USA Inc. BAW62,133	Standard	2 pF	4 ns	200 °C	ALF2	250 mA	1 V	Through Hole	75 V	5 µA	Axial DO-204AH DO-35	500 ns	200 mA
NXP USA Inc. BAW62,113	Standard	2 pF	4 ns	200 °C	ALF2	250 mA	1 V	Through Hole	75 V	5 µA	Axial DO-204AH DO-35	500 ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

High Conductance Fast Diode

Technical documentation and resources