Discrete Semiconductor Products

IRF634STRLPBF

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MOSFET N-CHANNEL 250V

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Discrete Semiconductor Products

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MOSFET N-CHANNEL 250V

Technical Specifications

Parameters and characteristics for this part

Specification	IRF634STRLPBF

Current - Continuous Drain (Id) @ 25°C	8.1 A
Mounting Type	Surface Mount
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Supplier Device Package	TO-263 (D2PAK)

Part	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRF634STRRPBF	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8.1 A	MOSFET (Metal Oxide)	TO-263 (D2PAK)	450 mOhm	-55 °C	150 °C	N-Channel	250 V	41 nC	770 pF	Surface Mount	20 V	10 V	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF634STRLPBF		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8.1 A		TO-263 (D2PAK)								Surface Mount
Vishay General Semiconductor - Diodes Division IRF634	4 V	TO-220-3	8.1 A	MOSFET (Metal Oxide)	TO-220AB	450 mOhm	-55 °C	150 °C	N-Channel	250 V	41 nC	770 pF	Through Hole	20 V	10 V		74 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

8.1A (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources