Specification	CSD19536KCS

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

CSD19536KCS Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]
Texas Instruments CSD19536KCS	6 V 10 V	3.2 V	-55 °C	175 ░C	N-Channel	Through Hole	12000 pF	TO-220-3	2.7 mOhm	150 A	MOSFET (Metal Oxide)	100 V	153 nC	TO-220-3	20 V	375 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources