Discrete Semiconductor Products

PH6325L,115

LTB

MOSFET N-CH 25V 78.7A LFPAK56

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Discrete Semiconductor Products

LTB

MOSFET N-CH 25V 78.7A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH6325L,115

Current - Continuous Drain (Id) @ 25°C	78.7 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1871 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PH6325L,115	LFPAK56 Power-SO8	25 V	-55 °C	150 °C	6.3 mOhm	Surface Mount	2 V	N-Channel	1871 pF	78.7 A	SC-100 SOT-669	MOSFET (Metal Oxide)	4.5 V 10 V	62.5 W	20 V	13.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 78.7A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources