Discrete Semiconductor Products

MCG35N04A-TP

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INTERFACE

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCG35N04A-TP

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	40 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Technology	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCG35N04A-TP	1860 pF	40 V	20 V	-55 °C	150 °C	2.5 V	35 A	Surface Mount	46.7 nC	N-Channel	8 mOhm	40 W	MOSFET (Metal Oxide)	8-VDFN Exposed Pad	DFN3333	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 0.26

General part information

N-Channel 40 V 35A 40W Surface Mount DFN3333

Technical documentation and resources