Discrete Semiconductor Products

SIB914DK-T1-GE3

Obsolete

MOSFET 2N-CH 8V 1.5A SC75-6L

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 8V 1.5A SC75-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIB914DK-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25¯C	1.5 A
Drain to Source Voltage (Vdss)	8 V
Gate Charge (Qg) (Max) @ Vgs	2.6 nC
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAKÛ SC-75-6L Dual
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	113 mOhm
Supplier Device Package	PowerPAKÛ SC-75-6L Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	800 mV

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25¯C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIB914DK-T1-GE3	2 N-Channel (Dual)	125 pF	1.5 A	PowerPAKÛ SC-75-6L Dual	2.6 nC	8 V	Surface Mount	800 mV	PowerPAKÛ SC-75-6L Dual	113 mOhm	MOSFET (Metal Oxide)	3.1 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 8V 1.5A 3.1W Surface Mount PowerPAKÛ SC-75-6L Dual

Technical documentation and resources

No documents available