Discrete Semiconductor Products

PH3330L,115

Obsolete

MOSFET N-CH 30V 100A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH3330L,115

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30.5 nC
Input Capacitance (Ciss) (Max)	4840 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	62.5 W
Rds On (Max)	3.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.15 V

Part	FET Type	Current - Continuous Drain (Id) (Tc)	Technology	Package / Case	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)
NXP USA Inc. PH3330L,115	N-Channel	100 A	MOSFET (Metal Oxide)	SC-100 SOT-669	20 V	30.5 nC	-55 °C	150 °C	LFPAK56 Power-SO8	Surface Mount	3.3 mOhm	30 V	10 V	4.5 V	62.5 W	2.15 V	4840 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available