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Toshiba-RN4605(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT NPN/PNP 50V 0.1A 300mW 6-Pin SM T/R
Discrete Semiconductor Products

HN1D01F(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE SWITCHING 85V 0.1A 6-PIN SM T/R

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Toshiba-RN4605(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT NPN/PNP 50V 0.1A 300mW 6-Pin SM T/R
Discrete Semiconductor Products

HN1D01F(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE SWITCHING 85V 0.1A 6-PIN SM T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1D01F(TE85L,F)
Current - Average Rectified (Io) (per Diode)100 mA
Current - Reverse Leakage @ Vr500 nA
Diode Configuration2 Pair Common Anode
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]125 °C
Package / CaseSOT-457, SC-74
Reverse Recovery Time (trr)4 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageSM6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V
Voltage - Forward (Vf) (Max) @ If [Max]1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.42
Digi-Reel® 1$ 0.42
N/A 2990$ 0.40
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06

Description

General part information

HN1D01 Series

Diode Array 2 Pair Common Anode 80 V 100mA Surface Mount SC-74, SOT-457

Documents

Technical documentation and resources