Discrete Semiconductor Products

RJK0216DPA-00#J53

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MOSFET 2N-CH 25V 15A/32A 8DFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 15A/32A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0216DPA-00#J53

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C [Max]	32 A
Current - Continuous Drain (Id) @ 25°C [Min]	15 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN
Power - Max	10 W, 20 W
Rds On (Max) @ Id, Vgs [Max]	9.2 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)

Part	Power - Max	Technology	Operating Temperature	Configuration	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Mounting Type	Package / Case
Renesas Electronics Corporation RJK0216DPA-00#J53	10 W 20 W	MOSFET (Metal Oxide)	150 °C	2 N-Channel (Half Bridge)	25 V	6.2 nC	15 A	32 A	8-DFN (5x6)	9.2 mOhm	1130 pF	4.5V Drive Logic Level Gate	Surface Mount	8-WFDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	235	$ 1.28

General part information

Mosfet Array 25V 15A, 32A 10W, 20W Surface Mount 8-DFN (5x6)

Technical documentation and resources

No documents available