Discrete Semiconductor Products

RJK0216DPA-00#J53

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MOSFET 2N-CH 25V 15A/32A 8DFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 15A/32A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0216DPA-00#J53

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	15 A, 32 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	4.5 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN
Power - Max [Max]	20 W, 10 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Feature	FET Feature	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature	Power - Max [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package
Renesas Electronics Corporation RJK0216DPA-00#J53	9.2 mOhm	15 A 32 A	4.5 V	Logic Level Gate	25 V	MOSFET (Metal Oxide)	6.2 nC	2 N-Channel	150 °C	10 W 20 W	8-WFDFN	1130 pF	Surface Mount	8-DFN (5x6)

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General part information

Mosfet Array 25V 15A, 32A 10W, 20W Surface Mount 8-DFN (5x6)

Technical documentation and resources

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