MCP130N10YB-BP

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POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 100V, 0.0065OHM,

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Discrete Semiconductor Products

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POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 100V, 0.0065OHM,

Technical Specifications

Parameters and characteristics for this part

Specification	MCP130N10YB-BP

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	4450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs [Max]	5.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	FET Type
Micro Commercial Components MCP130N10YB-BP	4.5 V 10 V	TO-220AB	20 V	Through Hole	130 A	2.5 V	TO-220-3	-55 °C	150 °C	68 nC	4450 pF	100 V	MOSFET (Metal Oxide)	5.5 mOhm	310 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 0.77

General part information

N-Channel 100 V 130A (Tc) 310W Through Hole TO-220AB

Technical documentation and resources