Discrete Semiconductor Products
DMG2307LQ-7
ActiveDiodes Inc
MOSFET, P-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
DMG2307LQ-7
ActiveDiodes Inc
MOSFET, P-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG2307LQ-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 371.3 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 760 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 90 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMG2307LQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources