
BQ2205LYPW
ActiveBATTERY BACK-UP SUPERVISOR FOR DUAL SRAM BANKS
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BQ2205LYPW
ActiveBATTERY BACK-UP SUPERVISOR FOR DUAL SRAM BANKS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BQ2205LYPW |
|---|---|
| Controller Type | Nonvolatile SRAM |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | -20 C |
| Package / Case | 16-TSSOP |
| Package / Case [x] | 0.173 in |
| Package / Case [y] | 4.4 mm |
| Supplier Device Package | 16-TSSOP |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.26 | |
| 10 | $ 2.96 | |||
| 25 | $ 2.89 | |||
| 90 | $ 2.76 | |||
| Texas Instruments | TUBE | 1 | $ 4.67 | |
| 100 | $ 3.81 | |||
| 250 | $ 2.99 | |||
| 1000 | $ 2.54 | |||
Description
General part information
BQ2205LY Series
The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory.
A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM.
Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system. During power-valid operation, the input decoder, A, selects one of two banks of SRAM.
Documents
Technical documentation and resources