Specification	NTTFS6H888NTAG

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.9 W, 18 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTTFS6H888N Series

Power MOSFET, Single N-Channel, 80V, 13A, 55mΩ

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTTFS6H888NTAG	Surface Mount	220 pF	N-Channel	6 V 10 V	8-WDFN (3.3x3.3)	80 V	8-PowerWDFN	-55 °C	175 ░C	4.7 nC	2.9 W 18 W	20 V	MOSFET (Metal Oxide)	55 mOhm	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.