Discrete Semiconductor Products

SI8473EDB-T1-E1

Obsolete

MOSFET P-CH 20V 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8473EDB-T1-E1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI8473EDB-T1-E1	41 mOhm	20 V	MOSFET (Metal Oxide)	2.5 V 4.5 V	Surface Mount	P-Channel	1.1 W 2.7 W	1.5 V	4.5 A	-55 °C	150 °C	12 V	4-XFBGA CSPBGA	4-Microfoot

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 4.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources