Specification	2SK4177-DL-1E

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37.5 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	13 Ohm
Supplier Device Package	TO-263-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

2SK4177 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor 2SK4177-DL-1E	37.5 nC	20 V	80 W	13 Ohm	10 V	1500 V	N-Channel	TO-263-2	MOSFET (Metal Oxide)	Surface Mount	2 A	150 °C	380 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
ON Semiconductor 2SK4177-E	37.5 nC	20 V	80 W	13 Ohm	10 V	1500 V	N-Channel	SMP-FD	MOSFET (Metal Oxide)	Surface Mount	2 A	150 °C	380 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 V
ON Semiconductor 2SK4177-DL-E	37.5 nC	20 V	80 W	13 Ohm	10 V	1500 V	N-Channel	SMP-FD	MOSFET (Metal Oxide)	Surface Mount	2 A	150 °C	380 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SK4177 is an N-Channel Power MOSFET, 1500V, 2A, 13Ω, TO-263-2L for General-Purpose Switching Device Application.