Discrete Semiconductor Products

EMF24T2R

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

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Discrete Semiconductor Products

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMF24T2R

Current - Collector (Ic) (Max)	100 mA, 150 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180, 30
Frequency - Transition	250 MHz, 180 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	EMT6
Transistor Type	1 NPN Pre-Biased, 1 NPN
Vce Saturation (Max) @ Ib, Ic	300 mV, 400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max)	Resistor - Emitter Base (R2)	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor EMF24T2R	100 mA 150 mA	10 kOhms	180 MHz 250 MHz	1 NPN 1 NPN Pre-Biased	300 mV 400 mV	30 180	EMT6	SOT-563 SOT-666	500 nA	Surface Mount	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V 100mA, 150mA 250MHz, 180MHz 150mW Surface Mount EMT6

Technical documentation and resources