VS-8ETU12HN3

LTB

DIODE STANDARD 1200V 8A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

DIODE STANDARD 1200V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-8ETU12HN3

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	55 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	144 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.55 V

Part	Reverse Recovery Time (trr)	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Grade	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-8ETU12HN3	144 ns	Through Hole	200 mA 500 ns	175 ░C	-55 C	TO-220-2	TO-220AC	55 µA	Automotive	8 A	2.55 V	Standard	AEC-Q101	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.61

General part information

Diode 1200 V 8A Through Hole TO-220AC

Technical documentation and resources

No documents available