Discrete Semiconductor Products

PMV31XN,215

Obsolete

MOSFET N-CH 20V 5.9A TO236AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 5.9A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV31XN,215

Current - Continuous Drain (Id)	5.9 A
Current - Continuous Drain (Id) (Tc)	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	5.8 nC, 5.8 nC
Input Capacitance (Ciss) (Max)	410 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23 (TO-236AB)
Power Dissipation (Max)	280 mW
Rds On (Max)	37 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)	FET Type	Technology	Package / Case
NXP USA Inc. PMV31XN,215	2.5 V	4.5 V	12 V	280 mW	5.8 nC 5.8 nC	1.5 V	-55 °C	150 °C	20 V	Surface Mount	37 mOhm	410 pF	SOT-23 (TO-236AB)	5.9 A	5.9 A	N-Channel	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 5.9A (Tc) 280mW (Tj) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources