Discrete Semiconductor Products

PMV31XN,215

Obsolete

MOSFET N-CH 20V 5.9A TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 5.9A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV31XN,215

Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	280 mW
Rds On (Max) @ Id, Vgs [Max]	37 mOhm
Supplier Device Package	SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMV31XN,215	-55 °C	150 °C	20 V	SC-59 SOT-23-3 TO-236-3	SOT-23 (TO-236AB)	5.9 A	1.5 V	2.5 V 4.5 V	MOSFET (Metal Oxide)	37 mOhm	N-Channel	280 mW	Surface Mount	12 V	5.8 nC	410 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 5.9A (Tc) 280mW (Tj) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources