Discrete Semiconductor Products

IXTA1N200P3HV

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 2 KV, 1 A, 40 OHM, TO-263HV, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

IXTA1N200P3HV

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 2 KV, 1 A, 40 OHM, TO-263HV, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA1N200P3HV

Current - Continuous Drain (Id) @ 25°C	1 A
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds	646 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	40 Ohm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTA1R6N100D2HV Series

Disc Mosfet N-CH Depl Mode-Std TO-263D2

Part	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXTA1N170DHV	1700 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263HV	MOSFET (Metal Oxide)	290 W	10 V	-55 °C	150 °C	Depletion Mode	1 A	16 Ohm	3090 pF	Surface Mount	N-Channel	47 nC	20 V
Littelfuse/Commercial Vehicle Products IXTA1R6N100D2HV	1000 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263HV	MOSFET (Metal Oxide)		0 V	-55 °C	150 °C	Depletion Mode	1.6 A	10 Ohm	645 pF	Surface Mount	N-Channel		20 V	4.5 V	27 nC	100 W
Littelfuse/Commercial Vehicle Products IXTA1R6N50D2	500 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	MOSFET (Metal Oxide)		10 V	-55 °C	150 °C		1.6 A	2.3 Ohm	645 pF	Surface Mount	N-Channel Depletion Mode		20 V		23.7 nC	100 W
Littelfuse/Commercial Vehicle Products IXTA1N200P3HV		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	MOSFET (Metal Oxide)	125 W	10 V	-55 °C	150 °C		1 A	40 Ohm	646 pF	Surface Mount	N-Channel	23.5 nC	20 V	4 V
Littelfuse/Commercial Vehicle Products IXTA1R6N100D2	1000 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	MOSFET (Metal Oxide)		10 V	-55 °C	150 °C	Depletion Mode	1.6 A	10 Ohm	645 pF	Surface Mount	N-Channel		20 V		27 nC	100 W
Littelfuse/Commercial Vehicle Products IXTA1R4N100P	1000 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	MOSFET (Metal Oxide)	63 W	10 V	-55 °C	150 °C		1.4 A			Surface Mount	N-Channel		20 V	4.5 V	17.8 nC		11 Ohm	450 pF
Littelfuse/Commercial Vehicle Products IXTA1N200P3HV-TRL		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263HV	MOSFET (Metal Oxide)	125 W	10 V	-55 °C	150 °C		1 A	40 Ohm	646 pF	Surface Mount	N-Channel	23.5 nC	20 V	4 V
Littelfuse/Commercial Vehicle Products IXTA1R4N120P	1200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	MOSFET (Metal Oxide)	86 W	10 V	-55 °C	150 °C		1.4 A	13 Ohm	666 pF	Surface Mount	N-Channel	24.8 nC	20 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.41
		50	$ 7.51
		100	$ 6.72
		500	$ 5.93
		1000	$ 5.34

Description

General part information

IXTA1R6N100D2HV Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet