Discrete Semiconductor Products

MCP118N085Y-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP118N085Y-BP

Current - Continuous Drain (Id) @ 25°C	118 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	200 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCP118N085Y-BP	85 V	4300 pF	118 A	TO-220-3	TO-220AB (H)	6 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	4 V	Through Hole	62 nC	200 W	N-Channel	6.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 85 V 118A (Tc) 200W Through Hole TO-220AB (H)

Technical documentation and resources