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Littelfuse Power Semi TO-220 3 H 2Sq 3L image
Discrete Semiconductor Products

IXFP4N85X

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP/ TUBE

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Littelfuse Power Semi TO-220 3 H 2Sq 3L image
Discrete Semiconductor Products

IXFP4N85X

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFP4N85X
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)850 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC
Input Capacitance (Ciss) (Max) @ Vds247 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageTO-220AB (IXFP)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 2.11
NewarkEach 100$ 2.65
100$ 2.65
500$ 2.42
500$ 2.42
1000$ 2.13
1000$ 2.13
2500$ 1.98
2500$ 1.98

Description

General part information

IXFP4N85X Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources