Discrete Semiconductor Products

BUK7M9R9-60EX

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MOSFET N-CH 60V 60A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M9R9-60EX

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2007 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	79 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.9 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Qualification	Grade	Technology	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Freescale Semiconductor - NXP BUK7M9R9-60EX	20 V	30.1 nC	60 V	LFPAK33	9.9 mOhm	AEC-Q101	Automotive	MOSFET (Metal Oxide)	N-Channel	79 W	-55 °C	175 ░C	60 A	2007 pF	10 V	Surface Mount

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General part information

N-Channel 60 V 60A (Tc) 79W (Tc) Surface Mount LFPAK33

Technical documentation and resources