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ONSEMI ISL9V3040P3

Discrete Semiconductor Products

RX3G18BBGC16

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Rohm Semiconductor

MOSFET, N-CH, 40V, 270A, TO-220AB ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN List of Transistor Package Thermal Resistance +37

ONSEMI ISL9V3040P3

Discrete Semiconductor Products

RX3G18BBGC16

Active

Rohm Semiconductor

MOSFET, N-CH, 40V, 270A, TO-220AB ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN List of Transistor Package Thermal Resistance +37

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RX3G18BBGC16

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	13200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	1.47 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	931	$ 8.29
Newark	Each	1	$ 9.47
		10	$ 8.37
		25	$ 7.76
		50	$ 7.52
		100	$ 7.28
		250	$ 6.96
		500	$ 6.76

Description

General part information

RX3G18BBG Series

RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.

Documents

Technical documentation and resources

Technical Data Sheet EN

List of Transistor Package Thermal Resistance

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Types and Features of Transistors

Application Note

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

What Is Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

What is a Thermal Model? (Transistor)

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Notes for Calculating Power Consumption:Static Operation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

About Export Regulations

Export Information

Precautions When Measuring the Rear of the Package with a Thermocouple

TO-220AB Inner Structure

Package Information

Anti-Whisker formation - Transistors

Package Information

TO-220AB Reliability Test Result

Manufacturing Data

Moisture Sensitivity Level - Transistors

Package Information

Notes for Temperature Measurement Using Thermocouples

About Flammability of Materials

Environmental Data

Condition of Soldering / Land Pattern Reference

Package Information

TO-220AB Dimension

Package Information

RX3G18BBG ESD Data

Characteristics Data

Basics of Thermal Resistance and Heat Dissipation

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Two-Resistor Model for Thermal Simulation

TO-220AB Explanation for Marking

Package Information

PCB Layout Thermal Design Guide

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Part Explanation

Application Note

Report of SVHC under REACH Regulation

Environmental Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

TO-220AB Packing Information

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

RX3G18BBG Series

Nch 40V 270A, TO-220AB, Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor RX3G18BBGC16	13200 pF	2.5 V	N-Channel	TO-220AB	210 nC	192 W	MOSFET (Metal Oxide)	20 V	TO-220-3	180 A	Through Hole	1.47 mOhm	40 V	150 °C	4.5 V 10 V