Specification	FDPF20N50T

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59.5 nC
Input Capacitance (Ciss) (Max) @ Vds	3120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	38.5 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF20N50FT Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup>, FRFET<sup>®</sup>, 500 V, 20 A, 260 mΩ, TO-220F

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDPF20N50	10 V	3120 pF	38.5 W	230 mOhm	TO-220F-3	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	N-Channel	30 V	20 A	500 V	Through Hole	59.5 nC
ON Semiconductor FDPF20N50T	10 V	3120 pF	38.5 W	230 mOhm	TO-220F-3	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	N-Channel	30 V	20 A	500 V	Through Hole	59.5 nC
ON Semiconductor FDPF20N50FT	10 V	3390 pF	38.5 W	260 mOhm	TO-220F-3	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	N-Channel	30 V	20 A	500 V	Through Hole		65 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.77
		10	$ 3.16
		100	$ 2.25
		500	$ 1.86
		1000	$ 1.77
Newark	Each	500	$ 1.89
ON Semiconductor	N/A	1	$ 1.89

Description

General part information

FDPF20N50FT Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.