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RJK0653DPB-00#J5

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NCH POWER MOSFET 60V 45A 4.8MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 60V 45A 4.8MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0653DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch Power MOSFET 60V 45A 4.8mohm LFPAK56

Part	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK0653DPB-00#J5	Surface Mount	65 W	20 V	MOSFET (Metal Oxide)	2.5 V	LFPAK	4.5 V 10 V	6100 pF	SC-100 SOT-669	45 A	N-Channel	42 nC	150 °C	4.8 mOhm	60 V

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General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources