Discrete Semiconductor Products

SSM6L36TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-363F(UF6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-363F(UF6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L36TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	330 mA, 500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.23 nC, 1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF, 46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	630 mOhm, 1.31 Ohm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-363F(UF6)

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	FET Feature	FET Feature	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature
Toshiba Semiconductor and Storage SSM6L36TU,LF	330 mA 500 mA	500 mW	Logic Level Gate	1.5 V	20 V	6-SMD Flat Leads	UF6	MOSFET (Metal Oxide)	1 V	43 pF 46 pF	Surface Mount	1.31 Ohm 630 mOhm	1.2 nC 1.23 nC	N and P-Channel	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources