Discrete Semiconductor Products

TK50E06K3A,S1X(S

Obsolete

MOSFET N-CH 60V 50A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 50A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK50E06K3A,S1X(S

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Mounting Type	Through Hole
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK50E06K3A,S1X(S	54 nC	TO-220-3	Through Hole	MOSFET (Metal Oxide)	N-Channel	50 A	TO-220-3	8.5 mOhm	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 50A (Tc) Through Hole TO-220-3

Technical documentation and resources