Discrete Semiconductor Products

NTLJS4114NT1G

Active

POWER MOSFET, N CHANNEL, 30 V, 7.8 A, 0.0203 OHM, WDFN, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 30 V, 7.8 A, 0.0203 OHM, WDFN, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTLJS4114NT1G

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Single N-Channel µCool™ Power MOSFET 30V 7.8A 35mΩ

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor NTLJS4114NTAG	30 V	650 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	700 mW	Surface Mount	35 mOhm	3.6 A	13 nC	1.8 V 4.5 V	6-WDFN (2x2)	N-Channel	12 V	1 V
ON Semiconductor NTLJS4114NT1G	30 V	650 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	700 mW	Surface Mount	35 mOhm	3.6 A	13 nC	1.8 V 4.5 V	6-WDFN (2x2)	N-Channel	12 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 30 V, 7.8 A, µCool™ Single N-Channel 2x2 mm WDFN Package

Technical documentation and resources