Discrete Semiconductor Products

SQS405ENW-T1_GE3

Obsolete

MOSFET P-CH 12V 16A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQS405ENW-T1_GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	39 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SQS405EN-T1_GE3	2650 pF	20 mOhm	1 V	12 V	75 nC	Surface Mount	8 V	39 W	2.5 V 4.5 V	16 A	Automotive	AEC-Q101	MOSFET (Metal Oxide)	-55 °C	175 ░C	PowerPAK® 1212-8	P-Channel	PowerPAK® 1212-8
Vishay General Semiconductor - Diodes Division SQS405ENW-T1_GE3	2650 pF	20 mOhm	1 V	12 V	75 nC	Surface Mount	8 V	39 W	2.5 V 4.5 V	16 A	Automotive	AEC-Q101	MOSFET (Metal Oxide)	-55 °C	175 ░C	PowerPAK® 1212-8	P-Channel	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 16A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources