Discrete Semiconductor Products

PSMN039-100YS,115

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MOSFET N-CH 100V 28.1A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 100V 28.1A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN039-100YS,115

Current - Continuous Drain (Id) @ 25°C	28.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1847 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	39.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN039-100YS,115	LFPAK56 Power-SO8	39.5 mOhm	1847 pF	SC-100 SOT-669	N-Channel	28.1 A	Surface Mount	20 V	10 V	74 W	23 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 28.1A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources