Discrete Semiconductor Products

HER303GA-G

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DIODE GEN PURP 200V 3A DO27

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	HER303GA-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-27, DO-201AA, Axial
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case
Comchip Technology HER303GA-G	200 V	DO-27	-55 °C	150 °C	Standard	200 mA 500 ns	Through Hole	5 ÁA	1 V	3 A	50 ns	Axial DO-201AA DO-27

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General part information

Diode 200 V 3A Through Hole DO-27

Technical documentation and resources

No documents available