Discrete Semiconductor Products

MMUN2140LT1G

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BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

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Discrete Semiconductor Products

Active

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

Specification	MMUN2140LT1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	246 mW
Resistor - Base (R1)	47 kOhms
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MMUN2140LT1G	PNP - Pre-Biased	250 mV	100 mA	Surface Mount	120	SC-59 SOT-23-3 TO-236-3	47 kOhms	500 nA	SOT-23-3 (TO-236)	246 mW	50 V

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources