Discrete Semiconductor Products

VS-C5TX3012-M3

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DIODE ARRAY GP 1200V TO220AB

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Discrete Semiconductor Products

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DIODE ARRAY GP 1200V TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-C5TX3012-M3

Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	44 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.3 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-C5TX3012-M3	TO-220AB	44 ns	Standard	1.2 kV	50 µA	200 mA 500 ns	Through Hole	TO-220-3	175 ░C	-55 C	3.3 V

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General part information

Diode Array 1200 V Through Hole TO-220-3

Technical documentation and resources