Discrete Semiconductor Products

GBPC2508W

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BRIDGE RECT 1P 800V 25A GBPC-W

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 800V 25A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC2508W

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-W
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max)	800 V

Part	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Diode Type	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max)	Package / Case	Package / Case
GeneSiC Semiconductor GBPC2508W	4-Square GBPC-W	GBPC-W	150 °C	-55 °C	Single Phase	Through Hole	1.1 V	25 A	Standard	5 µA	800 V
GeneSiC Semiconductor GBPC2508T		GBPC	150 °C	-55 °C	Single Phase	QC Terminal	1.1 V	25 A	Standard	5 µA	800 V	4-Square	GBPC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBPC-W

Technical documentation and resources