Discrete Semiconductor Products

FFPF40U60STU

Obsolete

DIODE GEN PURP 600V 40A TO220F

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 40A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	FFPF40U60STU

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	110 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220F-2L
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
ON Semiconductor FFPF40U60STU	Through Hole	600 V	20 µA	Avalanche	150 °C	-65 C	TO-220F-2L	40 A	TO-220-2 Full Pack	200 mA 500 ns	2.1 V	110 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 40A Through Hole TO-220F-2L

Technical documentation and resources