Discrete Semiconductor Products

SI1902DL-T1-E3

LTB

MOSFET 2N-CH 20V 0.66A SC70-6

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 0.66A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1902DL-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	660 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	270 mW
Rds On (Max) @ Id, Vgs	385 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	FET Feature	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1902DL-T1-E3	2 N-Channel (Dual)	20 V	270 mW	660 mA	1.2 nC	MOSFET (Metal Oxide)	SC-70-6	385 mOhm	Surface Mount	1.5 V	Logic Level Gate	6-TSSOP SC-88 SOT-363	-55 °C	150 °C

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General part information

Mosfet Array 20V 660mA 270mW Surface Mount SC-70-6

Technical documentation and resources