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Technical Specifications
Parameters and characteristics for this part
| Specification | RCX511N25 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 51 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 120 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 2.23 W, 40 W |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 3.05 | |
| 10 | $ 2.56 | |||
| 100 | $ 2.07 | |||
| 500 | $ 1.84 | |||
| 1000 | $ 1.58 | |||
| 2000 | $ 1.48 | |||
| 5000 | $ 1.42 | |||
Description
General part information
RCX511N25 Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources