Discrete Semiconductor Products

SI7309DN-T1-E3

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MOSFET P-CH 60V 8A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET P-CH 60V 8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7309DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	19.8 W, 3.2 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7309DN-T1-GE3	20 V	8 A	3.2 W 19.8 W	PowerPAK® 1212-8	MOSFET (Metal Oxide)	115 mOhm	PowerPAK® 1212-8	-55 °C	150 °C	600 pF	Surface Mount	4.5 V 10 V	P-Channel	60 V	3 V	22 nC
Vishay General Semiconductor - Diodes Division SI7309DN-T1-E3	20 V	8 A	3.2 W 19.8 W	PowerPAK® 1212-8	MOSFET (Metal Oxide)	115 mOhm	PowerPAK® 1212-8	-55 °C	150 °C	600 pF	Surface Mount	4.5 V 10 V	P-Channel	60 V	3 V	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources