Specification	HUFA76419D3ST

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27.5 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

HUFA76419D_F085 Series

N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case
ON Semiconductor HUFA76419D3ST	60 V	37 mOhm	N-Channel	TO-252AA	4.5 V 10 V	16 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	900 pF	3 V	27.5 nC	75 W	20 A	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor HUFA76419D3ST	60 V	37 mOhm	N-Channel	TO-252AA	4.5 V 10 V	16 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	900 pF	3 V	27.5 nC	75 W	20 A	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level UltraFET®Power MOSFET 60 V, 20 A, 43 mΩ

Technical documentation and resources