Discrete Semiconductor Products

BSP51,115

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TRANS NPN DARL 60V 1A SOT223

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Discrete Semiconductor Products

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TRANS NPN DARL 60V 1A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP51,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.25 W
Qualification	AEC-Q101
Supplier Device Package	SOT-223
Vce Saturation (Max) @ Ib, Ic	1.3 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Qualification	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Grade	Frequency - Transition
Freescale Semiconductor - NXP BSP51,115	AEC-Q101	1 A	150 °C	TO-261-4 TO-261AA	60 V	50 nA	2000	1.25 W	Surface Mount	1.3 V	SOT-223	Automotive	200 MHz

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General part information

Bipolar (BJT) Transistor NPN - Darlington 60 V 1 A 200MHz 1.25 W Surface Mount SOT-223

Technical documentation and resources