Discrete Semiconductor Products

SI1922EDH-T1-BE3

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MOSFET 2N-CH 20V 1.3A SC70-6

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 1.3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1922EDH-T1-BE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.3 A, 1.3 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	740 mW, 1.25 W
Rds On (Max) @ Id, Vgs [Max]	198 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Configuration	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI1922EDH-T1-BE3	20 V	MOSFET (Metal Oxide)	1 V	Surface Mount	1.3 A 1.3 A	6-TSSOP SC-88 SOT-363	2 N-Channel (Dual)	198 mOhm	2.5 nC	1.25 W 740 mW	-55 °C	150 °C	SC-70-6

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General part information

Mosfet Array 20V 1.3A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6

Technical documentation and resources