Discrete Semiconductor Products

BF823,215

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TRANS PNP 250V 0.05A TO236AB

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Discrete Semiconductor Products

Active

TRANS PNP 250V 0.05A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BF823,215

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	60 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	250 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Transistor Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Grade	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP BF823,215	50 hFE	AEC-Q101	250 mW	50 mA	SC-59 SOT-23-3 TO-236-3	60 MHz	PNP	150 °C	250 V	0.01 µA	Automotive	Surface Mount	TO-236AB	800 mV

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General part information

Bipolar (BJT) Transistor PNP 250 V 50 mA 60MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources